发明名称 CMP METHOD FOR COPPER-CONTAINING SUBSTRATES
摘要 The invention provides a chemical-mechanical polishing composition comprising an abrasive, a benzotriazole derivative, an oxidizing agent selected from the group consisting of iodate compounds, organic oxidizing agents, and mixtures thereof, and water, wherein the polishing composition comprises substantially no organic carboxylic acid having a molecular weight of less than 500 Daltons, and wherein the polishing composition comprises no alkyl sulfate having a molecular weight of less than 500 Daltons. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. ® KIPO & WIPO 2009
申请公布号 KR20080111149(A) 申请公布日期 2008.12.22
申请号 KR20087028339 申请日期 2008.11.20
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 ZHANG JIAN;CARTER PHILLIP;LI SHOUTIAN
分类号 C09K3/14 主分类号 C09K3/14
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