| 摘要 |
The STI formation method for prevention of divot is provided to improve the yield of the semiconductor device and suppresses the generation of divot in the STI formation and to reduce the failure rate of the semiconductor device. The method for forming STI on the silicon substrate includes as follows. A step is for depositing the TEOS(I) layer(11) on the silicon substrate(10). A step is for depositing the nitride film(12) on the TEOS layer. A step is for depositing the TEOS(II) layer(13) on the nitride film. A step is for forming the trench(14) by performing the lithographically processing on the part in which STI of the silicon substrate is formed to the predetermined depth. A step is for gap-filling the trench with the TEOS(15). A step is for removing TEOS which is gap-filled in the TEOS layer and on the upper part of TEOS by CMP. A step is for performing the wet etching to remove the nitride film. A step is for removing TEOS which is gap-filled in the TEOS layer and on the upper part of TEOS by CMP.
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