| 摘要 |
The PVD processing chamber system is provided to improve the uniformity of the film thickness which is deposited on the wafer by supplying argon gas in a space between the target and the wafer. The PVD processing chamber system comprises the heater(16), the argon nozzle(24), and the target(22). The heater controls the temperature of the chucked wafer and chucks the wafer(18). The argon is supplied the argon nozzle to the process inside of chamber. The target is positioned at the upper of wafer. One side of the target has the magnet for forming the magnetic field. The target collides with the ion of the argon and emits the metal element. The periphery of target is formed with the polygon shape. The outer side argon nozzles(26, 27), the process argon nozzle and the process argon nozzle is provided. The inner side argon nozzle is inclined to the process argon nozzle. The outer side argon nozzle is set in the vertical down direction. The process argon nozzle and the inside and outer side argon nozzles are arranged in the central part of target.
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