发明名称 |
METHODS FOR CLEANING A FURNACE |
摘要 |
A method for washing a diffusion furnace is provided to shorten cleaning time and improve the productivity of a semiconductor product by removing the residue of deposition materials formed within a tube of a diffusion furnace within fast time. A method for washing a diffusion furnace having a tube in which a deposition producing is performed comprises: a step for setting temperature within a tube into cleaning temperature(S200); a step for flowing cleaning gas including nitrogen(N2) gas and chlorine trifluoride(ClF3) gas to the tube(S210); and a step for washing the tube(S220). The inflow rate of nitrogen gas versus the inflow of chlorine trifluoride gas is 1.4 :1 to 1 : 1.
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申请公布号 |
KR20080110947(A) |
申请公布日期 |
2008.12.22 |
申请号 |
KR20050116950 |
申请日期 |
2005.12.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, BYUNG SEUB |
分类号 |
H01L21/20;B08B5/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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