发明名称 METHODS FOR CLEANING A FURNACE
摘要 A method for washing a diffusion furnace is provided to shorten cleaning time and improve the productivity of a semiconductor product by removing the residue of deposition materials formed within a tube of a diffusion furnace within fast time. A method for washing a diffusion furnace having a tube in which a deposition producing is performed comprises: a step for setting temperature within a tube into cleaning temperature(S200); a step for flowing cleaning gas including nitrogen(N2) gas and chlorine trifluoride(ClF3) gas to the tube(S210); and a step for washing the tube(S220). The inflow rate of nitrogen gas versus the inflow of chlorine trifluoride gas is 1.4 :1 to 1 : 1.
申请公布号 KR20080110947(A) 申请公布日期 2008.12.22
申请号 KR20050116950 申请日期 2005.12.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, BYUNG SEUB
分类号 H01L21/20;B08B5/00 主分类号 H01L21/20
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