| 摘要 |
The semiconductor device and a method of manufacture thereof are provided to prevent the deterioration of the dark current property of the image sensor caused by the etching process for gate oxide layer. The method of manufacturing the semiconductor device comprises as follows. A step is for forming the first photoresist(40) on the semiconductor substrate(10) in which the gate oxide layer(20) and gate poly layer(30) are successively formed. A step is for forming the first opening domain on the logic area by patterning the first photo resist. A step is for performing the first etching on a part of the gate oxide layer and the gate poly layer corresponding to the first opening region. A step is for forming the second photoresist(42) on the semiconductor substrate. A step is for forming the second aperture region on the photodiode by patterning the second photoresist. A step is for performing the second etching on a part of the gate oxide layer and the gate poly layer corresponding to the second aperture region. A step is for removing the first and the second photoresist remaining in the semiconductor substrate. A step is for forming the native oxide film in the surface of semiconductor substrate by performing the wet cleaning process on the semiconductor substrate.
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