METHOD FOR CLEANING OF INTERNAL SURFACES OF SILICON HYDROGEN RESTORATION PLANTS FROM POLYSILANECHLORIDES

摘要

FIELD: technological processes; chemistry. ^ SUBSTANCE: after process of hydrogen restoration of silicon rods with polycrystalline silicon deposited on them are cooled down to the temperature of +600230C. As dissolvent, silicon tetrachloride is supplied in mixture with hydrogen at mole ratio of 1: (0.51.0). Temperature of reactor walls is maintained within the limits of +3540C through the whole process. Safe unloading of polycrystalline silicon is carried out after performance of technological process of restoration with elimination of any residual traces of polysilanechlorides in detachable parts of reactor and units of hydrogen restoration plant. ^ EFFECT: polycrystalline silicon of high quality and reduction of time for plant units intercycle processing and preparation for the following process. ^ 1 dwg