发明名称 VOLTAGE OFFERING CIRCUIT AND FLASH MEMORY DEVICE HAVING THE SAME AND METHOD OF OPERATING THE SAME
摘要 A voltage offering circuit and flash memory device having the same and method of operating the same is provided to reduce pumping time to the operation voltage level and supply voltage stably. In a voltage supply circuit(250), a voltage generation unit(251) generates a first voltage having voltage level and stores it before a power-up operation is initiated. A power-up check unit(258) outputs the power-up check signal according to the exterior voltage supply. A status check unit outputs a state check signal to check an idle state or an active state according to an operation command signal. A controller(255) operates the voltage generation unit according to a power-up check signal or the state check signal, or operation state and outputs a first control signal for stopping operation.
申请公布号 KR100875012(B1) 申请公布日期 2008.12.19
申请号 KR20070105624 申请日期 2007.10.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG, CHAE KYU
分类号 G11C16/30;G11C16/34 主分类号 G11C16/30
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