| 摘要 |
Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ‰¥ 20 µm below the wafer surface in the range of 5x10 11 /cm 3 , and a density of BMDs with sizes of ‰¥ 300 nm ‰ 1x10 7 /cm 3 , exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal. |
