发明名称 METHOD FOR MEASURING DISTANCE BETWEEN REFERENCE REFLECTOR AND MELT SURFACE, METHOD FOR CONTROL THE POSITION OF MELT SURFACE USING SAME, AND SILICON SINGLE CRYSTAL PRODUCING APPARATUS
摘要 A method for measuring the relative distance between a reference reflector installed above the melt surface and the melt surface when a silicon single crystal is pulled up from the material melt in a crucible by the CZ method. The method is characterized in that the silicon single crystal is pulled up while applying a magnetic field, the real image of the reference reflector and the mirror image of the reference reflector reflected from the melt surface are captured by detecting means, the captured real image of the reference reflector and the captured mirror image are separately processed, the relative distance between the real and mirror images of the reference reflector is computed from the processed images, and thus the relative distance between the reference reflector and the melt surface is measured. With this, a method for more stably and more accurately measuring the distance between the reference reflector and the melt surface is provided. ® KIPO & WIPO 2009
申请公布号 KR20080110865(A) 申请公布日期 2008.12.19
申请号 KR20087026078 申请日期 2008.10.24
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 URANO MASAHIKO;FUSEGAWA IZUMI
分类号 C30B15/26;C30B29/06 主分类号 C30B15/26
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