发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide photoresist coating technique for reducing the consumption of photoresist by dripping the photoresist through high-speed rotation and obtaining high in-surface film thickness precision in filming of a substrate (wafer) with the photoresist. SOLUTION: Disclosed is a coating device which films the wafer with the photoresist to a prescribed thickness by dripping the photoresist on the wafer and rotating the wafer. Further, disclosed is a coating method in which a wafer rotational frequency is so controlled that when the wafer is rotated and coated with the photoresist, the rotational frequency of the wafer is decreased after the photoresist is dripped and spread over the entire surface of the wafer while the wafer is rotated at a rotational frequency RH higher than a filming rotational frequency RL of the photoresist and then the filming with the photoresist is carried out at the filming rotational frequency RL, lower than a turbulence generation rotational frequency RR, at which the prescribed film thickness is obtained. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008306220(A) 申请公布日期 2008.12.18
申请号 JP20080241980 申请日期 2008.09.22
申请人 RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC 发明人 YAMAGAMI TAKASHI;KANAI SHOJI;TAMIYA YOICHIRO;OKANE SHINYA;HARASHIMA MASASHIGE;ISHIUCHI MASAHIRO;KANEMATSU MASAYOSHI;KUROIWA KEIZO
分类号 H01L21/027 主分类号 H01L21/027
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