DEPOSITION OF TRANSITION METAL CARBIDE CONTAINING FILMS
摘要
Methods and compositions for the deposition of a transition metal containing film in a semiconductor manufacturing process. A first vaporized metal precursor is introduced into a reaction chamber along with a second precursor mixture which comprises at least one carbon source. The reaction chamber contains at least one substrate, and a metal containing film is formed on the substrate through a deposition process.
申请公布号
WO2008129508(A3)
申请公布日期
2008.12.18
申请号
WO2008IB51532
申请日期
2008.04.21
申请人
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;YANAGITA, KAZUTAKA;DUSSARRAT, CHRISTIAN