| 摘要 |
<p>This invention provides a resist composition for negative working-type development, which can reduce line edge roughness, can enhance the in-plane evenness of the pattern dimension, and further is excellent in bridge margin, for stably forming a highly accurate fine pattern for the production of a highly integrated and highly accurate electronic device, and a method for pattern formation using the resist composition. The resist composition for negative working-type development comprises (A) a resin which undergoes, upon exposure to the action of an acid, an increase in its polarity, an increase in its solubility in a positive working-type developing solution, and a decrease in its solubility in a negative working-type developing solution, (B) a compound which generate an acid upon exposure to an actinic radiation or a radiation, and (C) a solvent. The logP value of the acid generated from the compound (B), which generates an acid upon exposure to an actinic radiation or a radiation, is not less than 1.5 and not more than 12.0.</p> |
