GAN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GAN SUBSTRATE

摘要

A GaN substrate a substrate including an epitaxial layer and semiconductor device and the manufacturing method of a GaN substrate is provided to improve the property of life and improve luminous efficiency in a long wavelength than 500 nm. A GaN substrate(1) having a major surface comprises a defect-free decision area(52), and a deformity aggregate area(51). The deformity aggregate area is adjacent to the defect-free decision area. The defect-free decision area and deformity aggregate area are extended to the rear side positioned in the major surface and opposite side from the major surface. A surface bearing [0001] is inclined to an off-angle toward the normal vector of the major surface.