METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE

摘要

A formation method of the semiconductor memory device is provided to prevent the property of sub-layer from being degraded due to the laser annealing process of the upper layer with the thermal isolation layer as the heat of the high temperature is applied to the laser annealing process by the thermal isolation layer. A formation method of the semiconductor memory device comprises that: a first thermal isolation layer(110) is formed on the semiconductor substrate(100); a first semiconductor active layer(120) is formed on the first thermal isolation layer; a first thin film layer is formed on the first semiconductor active layer; and a first thermal process is progressed by irradiating laser in the first thin film layer.