| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of easily and accurately adjusting the reflectivity and wavelength dependence of a shielding film in order to properly and rapidly carry out a redesign under transition of exposure wavelength, a resist drawing wavelength and an inspection wavelength or the like in a halftone type phase shift mask. <P>SOLUTION: A halftone type phase shift mask includes on a transparent substrate 1: a translucent film 2 having a predetermined transmittance and phase shift amount for an exposed light; and a shielding film pattern formed on the translucent film pattern. In a method of adjusting the reflectivity and wavelength dependence of the shielding film 3 of the halftone type phase shift mask, an uppermost layer portion of the shielding film 3 is set to be a reflectivity adjusting section 3a containing chromium, carbon, oxygen and nitrogen; and the reflectivity and wavelength dependence of the whole shielding film 3 is adjusted based on a content rate of the nitrogen in the reflectivity adjusting section 3a. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
