| 摘要 |
PROBLEM TO BE SOLVED: To reduce a resistant leak current of a bottom gate type TFT element constructed by using a polycrystalline semiconductor. SOLUTION: A semiconductor device includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode that are laminated on an insulating substrate in this order. The semiconductor layer has a TFT element comprising an active layer made of a polycrystalline semiconductor and contact layers each interposed between the active layer and the source electrode and between the active layer and the drain electrode. The source electrode and the drain electrode each have a first surface opposite to the back of the interface between the active layer and the gate insulating film and a second surface opposite to an etching end face of the active layer. The contact layers are interposed entirely in the region between the first surface of the source electrode and drain electrode and the active layer and in the region between the second surface of the source electrode and drain electrode and the active layer. COPYRIGHT: (C)2009,JPO&INPIT |
