| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a low-priced semiconductor device with little load to the environment. SOLUTION: The method for manufacturing a semiconductor device that performs plasma processing using gas containing SF<SB>6</SB>in a chamber having a member comprising alumite, wherein a reducing agent is allowed to contact the member comprising the alumite after plasma processing is performed by using the gas containing SF<SB>6</SB>and the like. COPYRIGHT: (C)2009,JPO&INPIT
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| 申请公布号 |
JP2008306038(A) |
申请公布日期 |
2008.12.18 |
| 申请号 |
JP20070152635 |
申请日期 |
2007.06.08 |
| 申请人 |
KAWASAKI MICROELECTRONICS KK |
发明人 |
SUZUKI YASUTSUGU;YASUDA MIKA |
| 分类号 |
H01L21/3065;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3065 |
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