| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a metal silicide layer from being peeled or aggregating without increasing the gate width of a gate electrode. SOLUTION: In a semiconductor substrate 12, the gate electrode 24 is disposed so as to obliquely cross a boundary line between an N-type region 14 and a P-type region 16. With this configuration, the region width (effective gate width) where the boundary line between the N-type region 14 and the P-type region 16 and the gate electrode 24 cross each other is made larger than the gate width of the gate electrode 24. Accordingly, an abnormal resistance preventing smooth flow of current on the gate electrode 24 of the boundary line between the N-type region 14 and the P-type region 16 can be prevented without physically increasing the gate width of the gate electrode 24. Also, since the abnormal resistance is suppressed, the necessity of increasing the gate width of the gate electrode 24 can be reduced, an increase in the area of the N-type region 14 and the P-type region 16 is suppressed and the semiconductor device 10 can be prevented from scaling up as a whole. COPYRIGHT: (C)2009,JPO&INPIT
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