发明名称 MULTICATHODE STRUCTURE OF SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a multicathode structure of a sputtering system capable of forming a thin film in which the distributions of film thickness and specific resistance in a substrate causing a problem by the enlargement of a target size accompanying the enlargement of a substrate size are satisfactory. SOLUTION: In the multicathode structure of the sputtering system, a backing 12 provided with a target 9 includes a plurality of partition plates 14 fitted via an insulation plate 19. By directly fixing the outer circumferential part of each partition plate 14 to a frame 18, a thin film in which the distributions of film thickness and specific resistance in a substrate are satisfactory can be formed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008303453(A) 申请公布日期 2008.12.18
申请号 JP20070154099 申请日期 2007.06.11
申请人 CANON ANELVA CORP 发明人 WATANABE KAZUTO;SASAKI MASAO
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址