| 发明名称 |
LOGIC CIRCUIT ON THE BASIS OF NITRIDES OF MAIN GROUP III ELEMENTS |
| 摘要 |
The invention relates to a logic circuit with at least one logic gate, wherein at least one of the at least one logic gates has, as temperature-optimized logic gate, at least one component with at least one semiconductor, which contains or comprises at least one nitride of at least one main group III element. |
| 申请公布号 |
WO2008151842(A1) |
申请公布日期 |
2008.12.18 |
| 申请号 |
WO2008EP04835 |
申请日期 |
2008.06.16 |
| 申请人 |
MICROGAN GMBH;DAUMILLER, INGO;KUNZE, MIKE |
发明人 |
DAUMILLER, INGO;KUNZE, MIKE |
| 分类号 |
H03K19/003;H01L29/20 |
主分类号 |
H03K19/003 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
