METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

The method of manufacturing the flash memory device is provided to reduce the surface damage of the floating gate in the etching process by using the device isolation mask film as the oxide film instead of a nitride film. The method of manufacturing the flash memory device comprises as follows. A step is for forming the turner insulating layer(102) on the semiconductor substrate(100), and the first conductive film(104) and device isolation mask pattern. A step is for forming the trench in the semiconductor substrate by patterning the first conductive film according to the device isolation mask pattern and tunnel insulating layer. A step is for filling the trench with the first insulating layer(110). A step is for lowering the aspect ratio of the trench by removing the device isolation mask pattern to expose the first conductive film by the planarization process. A step is for forming the second insulating layer on the first insulating layer.