LIGHT EMITTING ELEMENT, SEMICONDUCTOR CHIP, CHIP MODULE, METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a light emitting element which can be manufactured without a need for many processes such as repetition of film formation by the CVD method and which emits light in a relatively short wavelength region.

SOLUTION: The light emitting element comprises a first electrode, a second electrode, and an insulation layer which are formed between the first and second electrodes and contains fine particles. The fine particles are made of an oxide of Ge and have an average oxidation rate of 35 to 70%.

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