| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of reducing the cell size and preventing short-circuitings among electrodes, while maintaining the operating speed and signal difference. SOLUTION: The semiconductor memory is provided with a semiconductor layer 31 extended in a first direction, a source layer S, a drain layer D and a body B provided in the semiconductor layer; a bit line BL extended in the first direction; a first gate electrode GE1 provided on a first side SF1 of the body via a first gate insulating film GD1; a first gate line GL1 that is extended in the first direction, is connected to a bottom of the first gate electrode, and is integrally formed of the same material as in the first gate electrode; a second gate electrode GE2 that is provided on a second side SF2 of the body opposite to the first side and is provided via a second gate insulating film GD2; and a second gate line WL that is extended in a second direction that crosses the first direction, is connected to an upper section of the second gate electrode, and is integrally formed of the same material as that of the second gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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