| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic semiconductor memory capable of high speed operation and highly reliable in data retention. SOLUTION: The magnetic semiconductor memory is provided with memory cells 1 each of which includes a MTJ element 2, and wirings 11 and 12, extending in a Y-axis direction. A center line 11a of the wiring 11 is shifted to a +X direction from the MTJ elements 2, and a center line 12a of the wiring 12 is shifted to the -X direction from the MTJ elements 2. COPYRIGHT: (C)2009,JPO&INPIT
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