| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor which prevents a deterioration of a ferroelectric film, and a method of efficiently manufacturing the ferroelectric capacitor. SOLUTION: The method of manufacturing the ferroelectric capacitor comprises the steps of: forming a charge storage section 5 on a base insulating film 4; forming a hydrogen barrier film 61 by covering top faces of the charge storage section 5 and a primary plug conduction unit 81; forming a stopper film 65 by covering the hydrogen barrier film 61 on the charge storage section 5 and the hydrogen barrier film 61 on the primary plug conduction unit 81; forming an interlayer insulating film 7 on the base insulating film 4; and simultaneously forming a primary contact hole 71 exposing the primary plug conduction unit 81 and a secondary contact hole 72 exposing an upper part electrode 53 by etching the interlayer insulating film 7, the stopper film 65 and the hydrogen barrier film 61. The stopper film 65 is formed by using a material in which an etching rate of an etching in the step of forming the contact holes 71, 72 is smaller than that in the step of forming the interlayer insulating film 7. COPYRIGHT: (C)2009,JPO&INPIT
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