发明名称 Two-phase charge pump circuit without body effect
摘要 A two-phase charge pump circuit without the body effect includes a voltage boost stage, an input stage connected to the voltage boost stage, and a high-voltage generator connected to the input stage. Each of the circuits can consist of NMOS or PMOS transistors. The body of each NMOS transistor is connected to an NMOS switch. The body of each PMOS transistor is connected to a PMOS switch. By providing an appropriate driving signal to each NMOS or PMOS switch, the body of each NMOS transistor can be switched to a lower voltage level and the body of each PMOS transistor is switched to a higher voltage level. This can prevent the body effect from occurring.
申请公布号 US2008309399(A1) 申请公布日期 2008.12.18
申请号 US20080222811 申请日期 2008.08.18
申请人 EMEMORY TECHNOLOGY INC. 发明人 CHANG WU-CHANG;CHEN YIN-CHANG
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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