发明名称 |
METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION |
摘要 |
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
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申请公布号 |
US2008311747(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20080185189 |
申请日期 |
2008.08.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YUE DOUFENG;RUSSELL NOEL;CHEN PEIJUN J.;MERCER DOUGLAS E. |
分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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