EPITAXIAL WAFERS, METHOD FOR MANUFACTURING OF EPITAXIAL WAFERS, METHOD OF SUPPRESSING BOWING OF THESE EPITAXIAL WAFERS AND SEMICONDUCTOR MULTILAYER STRUCTURES USING THESE EPITAXIAL WAFERS

摘要

A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0<=x<=1, 0<=y<=1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.