发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a high resolution resist pattern by preventing occurrence of exposure failure in immersion exposure using an immersion liquid. <P>SOLUTION: The method for forming a resist pattern is provided with a process of forming a two-layer film by forming an upper layer film on a photo resist film formed on a substrate, an exposure process of forming a pattern by radiating light to the two-layer film in a state of filling an immersion liquid composed of a saturated hydrocarbon compound between the upper layer film and a lens, a heating process of heating the two-layer film, and a developing process of developing the two-layer film by a developer after the heating process. Refractive indices of the photo resist film, the upper layer film and the immersion liquid to a wavelength 193 nm are 1.6 to 1.8, and a transmissivity of the immersion liquid to the wavelength 193 nm is 98%/mm or more. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008306074(A) 申请公布日期 2008.12.18
申请号 JP20070153309 申请日期 2007.06.08
申请人 JSR CORP 发明人 KAWAGUCHI KAZUO;MIYAMATSU TAKASHI;YAMADA KINJI
分类号 H01L21/027;G03F7/11 主分类号 H01L21/027
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