| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method that can reduce the number of steps and cost when there coexist a plurality of patterns difficult to be formed by one exposure processing. <P>SOLUTION: The pattern forming method includes a step (S201) to form a first resist pattern on a film to be processed; a step (S202) to conduct slimming for the first resist pattern; a step (S204) to form a second resist pattern on the first resist pattern after slimming and on the film to be processed; and a step (S205) to process the film to be processed while using the first and second resist patterns as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
