| 摘要 |
PROBLEM TO BE SOLVED: To provide an HEMT having normally-off characteristics by providing a continuous growth inhibition layer and a discontinuous growth layer. SOLUTION: This HEMT has an electron travelling layer 3, a continuous growth inhibition layer 5 for selectively covering it, an electron supply layer (second semiconductor layer) 6, a discontinuous growth layer 7, a source electrode 9, a drain electrode 10, and a gate electrode 11. The continuous growth inhibition layer 5 and the discontinuous growth layer 7 are arranged under the gate electrode 11. A 2DEG layer 8 is formed along a hetero-junction surface between the electron travelling layer 3 and the electron supply layer (second semiconductor layer) 6. When a voltage is not applied to the gate electrode 11, the 2DEG layer is not formed along the interface between the electron travelling layer 3 and the continuous growth inhibition layer 5. Thereby, the HEMT having normally-off characteristics can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
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