发明名称 |
Gapfill for metal contacts |
摘要 |
A method of making a semiconductor interconnect is disclosed. A semiconductor body on which a transistor comprising a doped region is formed is provided. A dielectric region is formed over the doped region, and a contact hole is formed in the dielectric to expose the doped region. The contact hole is cleaned and a first layer of metal is formed over a bottom and sidewalls of the contact hole. The first layer of metal is thinned so that the thickness of the first layer of metal on the sidewalls is made more uniform. A barrier is formed over the first layer of metal and the contact hole is filled with conductive material.
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申请公布号 |
US2008311711(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20070818197 |
申请日期 |
2007.06.13 |
申请人 |
HAMPP ROLAND;KWAK JUN-KEUN;WONG KEITH KWONG HON |
发明人 |
HAMPP ROLAND;KWAK JUN-KEUN;WONG KEITH KWONG HON |
分类号 |
H01L21/4763;H01L21/336 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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