| 摘要 |
<p>A ferroelectric capacitor with a ferroelectric film excelling in orientation is produced. An amorphous or microcrystalline metal oxide film is formed on a first metal film having undergone preferential orientation of a given crystal face (steps S1 and S2). Thereafter, a ferroelectric film is formed according to the MOCVD method (step S3). In the stage of formation of the ferroelectric film, the metal oxide film on the first metal film is reduced into a second metal film, and the ferroelectric film is formed on the second metal film. The amorphous or microcrystalline metal oxide film can be easily homogeneously reduced in the stage of formation of the ferroelectric film, and by the reduction, the second metal film excelling in orientation can be obtained. Thus, the ferroelectric film excelling in orientation is formed on the second metal film. After the formation of the ferroelectric film, a superior electrode is formed thereon (step S4).</p> |
