SOLID STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To simultaneously realize a sufficient hole accumulation layer and a dark current reduction.

SOLUTION: A solid state imaging device 1 includes a light reception unit 12 which performs photoelectric conversion of an incident light. The solid state imaging device 1 has a film 21 formed on a light reception surface 12s of the light reception unit 12 so as to lower the interface state and a film 22 formed on the film 21 to lower the interface state and having a negative fixed charge. A hole accumulation layer 23 is formed on the light reception surface 12s of the light reception unit 12.

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