发明名称 |
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE |
摘要 |
A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.
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申请公布号 |
US2008308906(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20080137038 |
申请日期 |
2008.06.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OSADA HIDEKI;KASAI HITOSHI;ISHIBASHI KEIJI;NAKAHATA SEIJI;KYONO TAKASHI;AKITA KATSUSHI;MIURA YOSHIKI |
分类号 |
H01L29/20;C01B21/06;H01L21/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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