发明名称 Polishing composition for semiconductor wafer and polishing method
摘要 The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.
申请公布号 US2008311750(A1) 申请公布日期 2008.12.18
申请号 US20080081829 申请日期 2008.04.22
申请人 NIPPON CHEMICAL INDUSTRIAL CO., LTD.;SPEEDFAM CO., LTD. 发明人 IZUMI MASAHIRO;MIYABE SHINSUKE;MAEJIMA KUNIAKI;TANAKA HIROAKI
分类号 H01L21/304;B24B1/00;B24B37/00;B82Y10/00;B82Y99/00;C09K3/14 主分类号 H01L21/304
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