发明名称 |
Polishing composition for semiconductor wafer and polishing method |
摘要 |
The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.
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申请公布号 |
US2008311750(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20080081829 |
申请日期 |
2008.04.22 |
申请人 |
NIPPON CHEMICAL INDUSTRIAL CO., LTD.;SPEEDFAM CO., LTD. |
发明人 |
IZUMI MASAHIRO;MIYABE SHINSUKE;MAEJIMA KUNIAKI;TANAKA HIROAKI |
分类号 |
H01L21/304;B24B1/00;B24B37/00;B82Y10/00;B82Y99/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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主权项 |
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地址 |
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