发明名称 |
Method for Forming Oxide Dielectric Layer, and Capacitor Layer Forming Material Provided with Oxide Dielectric Layer Obtained by the Forming Method |
摘要 |
The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like is provided optionally between the one unit step and the next one unit step to control the film thickness. Process (c): A baking process of finally subjecting the coated metal substrate to a baking process at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like to finish the dielectric layer.
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申请公布号 |
US2008310073(A1) |
申请公布日期 |
2008.12.18 |
申请号 |
US20060912559 |
申请日期 |
2006.04.28 |
申请人 |
MITSUI MINING & SMELTING CO., LTD. |
发明人 |
KANNO AKIHIRO;SUGIOKA AKIKO;ABE NAOHIKO;NAKASHIMA HIROTAKE |
分类号 |
H01G4/018;B29C71/02;H01G13/00 |
主分类号 |
H01G4/018 |
代理机构 |
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