METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to facilitate the control of film thickness as the semiconductor layer is laminated and a semiconductor layer having concavo-convex is formed. A manufacturing method of a semiconductor device comprises: a step for forming a semiconductor layer(32) on the substrate(30); a step for forming a first insulation layer(31) on the semiconductor layer; a step for forming a conductive layer(34) on the first insulation layer; a step for forming a second insulation layer in the side of the conductive layer; a step for forming a second semiconductor layer contacting a part of the semiconductor layer and side of the second insulation layer; and a step for performing the heating processing in the semiconductor layer and the second semiconductor layer in order to form the semiconductor layer having concavo-convex.