发明名称 THIN FILM TRANSISTOR AND DISPLAY PANEL HAVING THE SAME
摘要 <p>A thin film transistor and display panel having the thin film transistor is provided to prevent the deviation of the kick-back voltage between the pixels of the display panel from generating as a source electrode and drain electrode are made on the gate electrode in the form of 1. A thin film transistor(100) comprises a gate portion(110), a gate insulating layer(120), a semiconductor layer(130), a source part(140), a drain portion(150). The gate portion comprises a gate electrode(111) and light blocking electrodes(112, 113). The light blocking electrode is extended from the gate electrode. The gate insulating layer covers the gate portion. The semiconductor layer is equipped on the gate insulating layer corresponding to the domain in which the gate electrode is formed. The source part is equipped on the semiconductor layer. The source part intersects with the gate electrode and light blocking electrode. The drain portion intersects with the gate electrode and light blocking electrode. The drain portion is separated from the source part and predetermined.</p>
申请公布号 KR20080110093(A) 申请公布日期 2008.12.18
申请号 KR20070058421 申请日期 2007.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SUNG HOON
分类号 H01L29/786 主分类号 H01L29/786
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