METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

Disclosed is a method for producing a group III nitride semiconductor comprising a sputtering step wherein a substrate and a target are arranged in a chamber and a group III nitride semiconductor doped with Mg is formed on the substrate by reactive sputtering. The sputtering step comprises a film-forming sub-step for forming a semiconductor thin film through doping with Mg and a plasma processing sub-step for subjecting the semiconductor thin film formed in the film-forming sub-step to an inert gas plasma treatment. A group III nitride semiconductor is formed by alternately repeating the film-forming sub-step and the plasma processing sub-step, thereby forming a laminate of semiconductor thin films.