METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDCUTOR DEVICE

摘要

A damage recovering method of a low dielectric constant film and a method for fabricating semiconductor device are provided to suppress an oxidation of a reclaimed metal and generation of a pattern deletion and recover the electrical characteristic of a low dielectric constant film. A damage recovering method of a low dielectric constant film comprises the following steps. A damage functional group generated by a processing treatment in the surface of a low dielectric constant film is substituted for a hydrophobic functional group(ST.2). A damage component which exists beneath the dense layer generated by a replacement processing in the surface of the low dielectric constant film is recovered by using an ultraviolet ray heating processing(ST.3).