发明名称 SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING IMAGE SENSOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate whose productivity is improved, a method for manufacturing it, a method for manufacturing the semiconductor element, and a method for manufacturing an image sensor. <P>SOLUTION: This method for manufacturing an image sensor includes providing a semiconductor substrate including a semiconductor layer 140 formed in a lower region and above the lower region, and formed in a sub-substrate 120 and on the sub-substrate 120 including a trench region where a plurality of trenches 122 are formed; forming a photoelectric conversion part 210 in the semiconductor layer 140; forming a wiring layer on the semiconductor layer 140; bonding a support substrate 410 to the upper part of the wiring layer; removing the lower region; exposing one side of the trench 122; removing the trench region of the sub-substrate 120; exposing the semiconductor layer 140; and forming a color filter and a microlens on the exposed semiconductor layer 140. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008306192(A) 申请公布日期 2008.12.18
申请号 JP20080151417 申请日期 2008.06.10
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SAI SHUNEI
分类号 H01L27/146;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/146
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