发明名称 |
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING IMAGE SENSOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate whose productivity is improved, a method for manufacturing it, a method for manufacturing the semiconductor element, and a method for manufacturing an image sensor. <P>SOLUTION: This method for manufacturing an image sensor includes providing a semiconductor substrate including a semiconductor layer 140 formed in a lower region and above the lower region, and formed in a sub-substrate 120 and on the sub-substrate 120 including a trench region where a plurality of trenches 122 are formed; forming a photoelectric conversion part 210 in the semiconductor layer 140; forming a wiring layer on the semiconductor layer 140; bonding a support substrate 410 to the upper part of the wiring layer; removing the lower region; exposing one side of the trench 122; removing the trench region of the sub-substrate 120; exposing the semiconductor layer 140; and forming a color filter and a microlens on the exposed semiconductor layer 140. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2008306192(A) |
申请公布日期 |
2008.12.18 |
申请号 |
JP20080151417 |
申请日期 |
2008.06.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SAI SHUNEI |
分类号 |
H01L27/146;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|