| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can reduce damage to crystal due to laser irradiation. SOLUTION: Ions are implanted in a surface portion of a silicon substrate to make it amorphous. Impurities are implanted into the region made amorphous. A pulse laser beam of 400 to 650 nm in wavelength is made incident on the region where the impurities are implanted to activate the implanted impurities. COPYRIGHT: (C)2009,JPO&INPIT
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