发明名称 PHOTOMASKS USED TO FABRICATE INTEGRATED CIRCUITRY, FINISHED-CONSTRUCTION BINARY PHOTOMASKS USED TO FABRICATE INTEGRATED CIRCUITRY, METHODS OF FORMING PHOTOMASKS, AND METHODS OF PHOTOLITHOGRAPHICALLY PATTERNING SUBSTRATES
摘要 A finished-construction binary photomask used to fabricated integrated circuitry includes a substrate having a device region and a non-device region. The device region has a transparent substrate having a pair of spaced adjacent binary features formed thereover. The spaced adjacent binary features have an opaque material and a phase-shifting material. The phase-shifting material is received between the transparent substrate and the opaque material. Sidewalls of the spaced adjacent binary features may include a coating layer. Other embodiments, including methods, are contemplated.
申请公布号 WO2008154108(A1) 申请公布日期 2008.12.18
申请号 WO2008US63503 申请日期 2008.05.13
申请人 MICRON TECHNOLOGY, INC. 发明人 STANTON, WILLIAM;WANG, FEI
分类号 G03F1/00;G03F1/08;G03F1/14 主分类号 G03F1/00
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