<p>It is possible to preferably form a gas atmosphere of a laser irradiation portion of a work in a laser processing unit. The laser processing unit processes the work by applying a laser light (3) to the work (amorphous semiconductor thin film (10)) while performing relative scanning. The laser processing device includes: a gas injection unit (a laser light application/gas injection opening (8)) for injecting a gas which forms an irradiation atmosphere in the vicinity of the laser irradiation portion of the work; and rectification planes (rectification plates (7a, 7b)) which extend along the scan direction from the vicinity of the gas injection portion while keeping a distance from the work surface. Thus, it is possible to form a gas atmosphere in a wide range along the scan direction and effectively perform laser processing such as anneal by using the preferable gas atmosphere upon laser application.</p>
申请公布号
WO2008152873(A1)
申请公布日期
2008.12.18
申请号
WO2008JP58840
申请日期
2008.05.14
申请人
THE JAPAN STEEL WORKS, LTD.;MACHIDA, MASASHI;SAWAI, MIKI;NAKADA, YUICHI;SAZUKA, HIROTAKA