发明名称 METALLIZED SUBSTRATE AND PROCESS FOR PRODUCING THE SAME
摘要 <p>This invention provides a metallized substrate having a novel structure. The metallized substrate comprises a ceramic substrate, a high-melting point metal layer provided on the ceramic substrate, and a substrate nickel plating layer, a layered nickel-phosphorus plating layer, a diffusion preventive plating layer, and a gold plating layer provided in that order on the high-melting point metal layer. The substrate nickel plating layer is a nickel metal plating layer, a nickel-boron plating layer, or a nickel-cobalt plating layer. The diffusion preventive plating layer is a columnar nickel-phosphorus plating layer, a palladium-phosphorus plating layer, or a palladium metal plating layer. According to the above constitution, even after heating in mounting a semiconductor chip, good bond strength of wire bonding can be realized.</p>
申请公布号 WO2008153026(A1) 申请公布日期 2008.12.18
申请号 WO2008JP60615 申请日期 2008.06.10
申请人 TOKUYAMA CORPORATION;IMAI, TETSUO;YATABE, OSAMU;MAEDA, MASAKATSU 发明人 IMAI, TETSUO;YATABE, OSAMU;MAEDA, MASAKATSU
分类号 H01L23/12;H01L21/60;H01L23/14 主分类号 H01L23/12
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