| 摘要 |
<p>A pattern formation method is provided to improve pattern resolution and a pattern by reducing roughness of in a multiple exposure process which performs multiple time exposure on a same resist film. A pattern formation method comprises: a step for exposing the resist film by the actinic ray or the radiation with multiple times; a step for heating the resist film to first temperature in one or more sections between exposure; a step for heating the resist film to second temperature before phenomenon after final exposure among multiple times of exposure. The second temperature is higher than the first temperature.</p> |
