发明名称 SRAM WITH ASYMMETRICAL PASS GATES
摘要 An SRAM having asymmetrical FET pass gates and a method of fabricating an SRAM having asymmetrical FET pass gates. The pass gates are asymmetrical with respect to current conduction from the drain to the source of the pass gate being different from current conduction from the source to the drain of the pass gate.
申请公布号 US2008310212(A1) 申请公布日期 2008.12.18
申请号 US20070763555 申请日期 2007.06.15
申请人 GREENE BRIAN JOSEPH;SUNG CHUN-YUNG;WANN CLEMENT;WONG ROBERT CHI-FOON;ZHANG YING 发明人 GREENE BRIAN JOSEPH;SUNG CHUN-YUNG;WANN CLEMENT;WONG ROBERT CHI-FOON;ZHANG YING
分类号 G11C11/40 主分类号 G11C11/40
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