SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

The number of pairs of multiquantum well (MQW) layers of an active layer is optimized for permitting an electron to efficiently rebind with a hole in the active layer, and light emitting efficiency is improved. A semiconductor light emitting element is provided with an n-type semiconductor layer (2); a p-type semiconductor layer (4); and an active layer (3), which is arranged between the n-type semiconductor layer (2) and the p-type semiconductor layer (4) and contains In having a multi quantum well structure of barrier layers (311-31n and 310) composed of GaN and well layers (321-32n) composed of InxGa1-xN (0<x<1). The number of the pairs of the MQW layers is 6-11, and electron overflow from the n-type semiconductor layer (2) to the p-type semiconductor layer (4), diffusion of a p-type dopant from the p-type semiconductor layer (4) to the well layers (321-32n) and diffusion of an n-type dopant from the n-type semiconductor layer (2) to the active layer (3) are suppressed. A method for manufacturing such semiconductor light emitting element is also provided.