发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <p>[PROBLEMS] To provide a plasma processing apparatus which can reduce the quantity of dielectric material to be used as much as possible. [MEANS FOR SOLVING PROBLEMS] A plasma processing apparatus is provided with a metal processing container (4) for storing a substrate (G) to be processed with plasma, and an electromagnetic wave source (34) for supplying the processing container (4) with an electromagnetic wave required for exciting plasma (P). The plasma processing apparatus is provided with one or more dielectric bodies (25) on the lower surface of a case (3) of the processing container (4). The dielectric body transmits the electromagnetic wave supplied from the electromagnetic wave source (34) into the processing container (4) and is partially exposed inside the processing container (4). A surface wave propagating section (51) for propagating the microwave along the metal surface exposed inside the processing container (4) is arranged adjacent to the dielectric body (25).</p>
申请公布号 WO2008153064(A1) 申请公布日期 2008.12.18
申请号 WO2008JP60692 申请日期 2008.06.11
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY;HIRAYAMA, MASAKI;OHMI, TADAHIRO;HORIGUCHI, TAKAHIRO 发明人 HIRAYAMA, MASAKI;OHMI, TADAHIRO;HORIGUCHI, TAKAHIRO
分类号 H05H1/46;C23C16/511;H01L21/3065 主分类号 H05H1/46
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